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Si2304BDS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
V DS (V)
30
R DS(on) ( ? )
0.070 at V GS = 10 V
0.105 at V GS = 4.5 V
I D (A)
3.2
2.6
Q g (Typ.)
2.6
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2304BDS (L4)*
* Marking Code
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free)
Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
3.2
2.5
10
2.6
2.1
A
Continuous Source Current (Diode Conduction) a, b
I S
0.9
0.62
Maximum Power Dissipation a, b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.08
0.69
- 55 to 150
0.75
0.48
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ? 5s
Steady State
Steady State
R thJA
R thJF
90
130
60
115
166
75
°C/W
Notes:
a. Surface mounted on FR4 board, t ? 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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